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- W2885661567 abstract "We have investigated the GaP/Si heterojunction interface for application in silicon heterojunction solar cells. We performed X-ray photoelectron spectroscopy (XPS) on thin layers of GaP grown on Si by metal organic chemical vapor deposition and molecular beam epitaxy. The conduction band offset was determined to be 0.9 ± 0.2 eV, which is significantly higher than predicted by Anderson's rule (0.3 eV). XPS also revealed the presence of Ga-Si bonds at the interface that are likely to be the cause of the observed interface dipole. Via cross-sectional Kelvin probe force microscopy (x-KPFM), we observed a charge transport barrier at the Si/GaP interface which is consistent with the high-conduction band offset determined by XPS and explains the low open-circuit voltage and low fill factor observed in GaP/Si heterojunction solar cells." @default.
- W2885661567 created "2018-08-22" @default.
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- W2885661567 date "2018-11-01" @default.
- W2885661567 modified "2023-09-26" @default.
- W2885661567 title "Study of the Interface in a GaP/Si Heterojunction Solar Cell" @default.
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- W2885661567 doi "https://doi.org/10.1109/jphotov.2018.2861724" @default.
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