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• W2886261066 abstract "Non-volatile resistive memory devices are theorized to be the most promising pathway towards analog memory and neuromorphic computing. Two-dimensional MoO3 is a versatile planar transition metal oxide, whose properties can be readily tuned, making it anywhere from a wide bandgap semiconductor to a semi-metal. Successful integration of such a planar metal oxide into resistive memory can enable adaptive and low power memory applications. Here, we investigate the non-volatile and reversible resistive switching behaviour of oxygen deficient MoOx in a cross-point metal/insulator/metal (MIM) architecture. Layered MoOx films are synthesised using chemical vapour deposition (CVD) and reveal excellent resistive switching performance with relatively low electroforming and operating voltages. Switching ratios of ∼103 and stable data retention of >104 s are achieved. As such, this work demonstrates the viability of MoOx as a resistive memory element and paves the way for future two-dimensional resistive memory technologies." @default.
• W2886261066 created "2018-08-22" @default.
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• W2886261066 date "2018-01-01" @default.
• W2886261066 modified "2023-10-18" @default.
• W2886261066 title "Reversible resistive switching behaviour in CVD grown, large area MoO_x" @default.
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• W2886261066 doi "https://doi.org/10.1039/c8nr04407d" @default.
• W2886261066 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/30141809" @default.
• W2886261066 hasPublicationYear "2018" @default.
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