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- W2886264311 abstract "Low-defect III-V integration on Si(1 0 0) requires atomically well-ordered heterointerfaces. To this end, we study the interaction of As with Si(1 0 0) surfaces and the formation of dimerized Si(1 0 0):As surfaces in situ with reflection anisotropy spectroscopy during metalorganic chemical vapor deposition (MOCVD). Control of surface processes allows us to intentionally ‘rotate’ the dimer orientation and choose between predominantly (1 × 2) and (2 × 1) reconstructed Si(1 0 0):As surfaces both for low and higher surface misorientation. We also verify that the (2 × 1) surface reconstruction becomes energetically more favorable for vicinal Si(1 0 0):As surfaces. We explain the preparation of Si(1 0 0):As surfaces displaying an almost single-domain, (1 × 2) reconstructed surface with an RMS roughness ≤1 Å and exhibiting broad, atomically flat terraces as well as regular double-layer steps. This surface is highly suitable for subsequent low-defect III-V integration." @default.
- W2886264311 created "2018-08-22" @default.
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- W2886264311 date "2018-12-01" @default.
- W2886264311 modified "2023-10-14" @default.
- W2886264311 title "Double-layer stepped Si(1 0 0) surfaces prepared in As-rich CVD ambience" @default.
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- W2886264311 doi "https://doi.org/10.1016/j.apsusc.2018.07.181" @default.
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