Matches in SemOpenAlex for { <https://semopenalex.org/work/W2886495026> ?p ?o ?g. }
- W2886495026 endingPage "3761" @default.
- W2886495026 startingPage "3754" @default.
- W2886495026 abstract "Germanium–tin (GeSn) p-channel fin field-effect transistor (p-FinFET) was realized on a novel GeSn-on-insulator (GeSnOI) substrate. The high-quality GeSnOI substrate was formed using direct wafer bonding technique and was layer-transferred from a 300-mm GeSn/Ge/Si donor wafer. Material quality was examined using atomic force microscopy, high-resolution transmission electron microscopy, Raman spectroscopy, and high-resolution X-ray diffraction. The fabricated GeSn p-FinFETs exhibit a small subthreshold swing ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${S}$ </tex-math></inline-formula> ) of 79 mV/decade at <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{text {DS}}$ </tex-math></inline-formula> of −0.05 V (by a device with <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${L}_{text {CH}}$ </tex-math></inline-formula> of 200 nm and <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${W}_{text {Fin}}$ </tex-math></inline-formula> of 30 nm), good control of short channel effects, and high intrinsic transconductance ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${G}_{m,text {int}} = 702,,mu text {S}/mu text{m}$ </tex-math></inline-formula> at <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{text {DS}}$ </tex-math></inline-formula> of −0.5 V for <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${L}_{text {CH}}$ </tex-math></inline-formula> of 80 nm). Low-temperature mobility analysis was performed on the GeSn p-FinFETs. High effective hole mobility ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$mu _{text {eff}}$ </tex-math></inline-formula> ) (210 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> / <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$text {V}cdot text {s}$ </tex-math></inline-formula> at 290 K and 398 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> / <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$text {V}cdot text {s}$ </tex-math></inline-formula> at 5 K) is achieved. The GeSn p-FinFETs presented in this paper exhibit the highest <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${G}_{m,text {int}}/{S}_{text {sat}}$ </tex-math></inline-formula> at <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{text {DS}}$ </tex-math></inline-formula> of −0.5 V for all the reported GeSn p-FETs to date." @default.
- W2886495026 created "2018-08-22" @default.
- W2886495026 creator A5014399843 @default.
- W2886495026 creator A5025542675 @default.
- W2886495026 creator A5026115376 @default.
- W2886495026 creator A5032249041 @default.
- W2886495026 creator A5040789541 @default.
- W2886495026 creator A5042727705 @default.
- W2886495026 creator A5045558621 @default.
- W2886495026 creator A5049195227 @default.
- W2886495026 creator A5051418089 @default.
- W2886495026 creator A5054063900 @default.
- W2886495026 creator A5057710758 @default.
- W2886495026 creator A5063188500 @default.
- W2886495026 creator A5089405457 @default.
- W2886495026 creator A5079218074 @default.
- W2886495026 date "2018-09-01" @default.
- W2886495026 modified "2023-09-28" @default.
- W2886495026 title "Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate" @default.
- W2886495026 cites W100799738 @default.
- W2886495026 cites W1539094466 @default.
- W2886495026 cites W1544674824 @default.
- W2886495026 cites W1613229453 @default.
- W2886495026 cites W1614208059 @default.
- W2886495026 cites W1865086029 @default.
- W2886495026 cites W1967156711 @default.
- W2886495026 cites W1981723171 @default.
- W2886495026 cites W1984034460 @default.
- W2886495026 cites W1985778956 @default.
- W2886495026 cites W1995139422 @default.
- W2886495026 cites W2000320979 @default.
- W2886495026 cites W2015639540 @default.
- W2886495026 cites W2017329260 @default.
- W2886495026 cites W2024815409 @default.
- W2886495026 cites W2028105697 @default.
- W2886495026 cites W2031958343 @default.
- W2886495026 cites W2034252264 @default.
- W2886495026 cites W2050515903 @default.
- W2886495026 cites W2057908310 @default.
- W2886495026 cites W2063197949 @default.
- W2886495026 cites W2074589556 @default.
- W2886495026 cites W2080887354 @default.
- W2886495026 cites W2082638946 @default.
- W2886495026 cites W2083177610 @default.
- W2886495026 cites W2085657217 @default.
- W2886495026 cites W2086352316 @default.
- W2886495026 cites W2091455062 @default.
- W2886495026 cites W2096756299 @default.
- W2886495026 cites W2110569515 @default.
- W2886495026 cites W2139063350 @default.
- W2886495026 cites W2139424966 @default.
- W2886495026 cites W2151829157 @default.
- W2886495026 cites W2239401816 @default.
- W2886495026 cites W2333318827 @default.
- W2886495026 cites W2336303009 @default.
- W2886495026 cites W2474387747 @default.
- W2886495026 cites W2500854597 @default.
- W2886495026 cites W2527164281 @default.
- W2886495026 cites W2534518392 @default.
- W2886495026 cites W2730380953 @default.
- W2886495026 cites W2743796062 @default.
- W2886495026 doi "https://doi.org/10.1109/ted.2018.2856738" @default.
- W2886495026 hasPublicationYear "2018" @default.
- W2886495026 type Work @default.
- W2886495026 sameAs 2886495026 @default.
- W2886495026 citedByCount "23" @default.
- W2886495026 countsByYear W28864950262019 @default.
- W2886495026 countsByYear W28864950262020 @default.
- W2886495026 countsByYear W28864950262021 @default.
- W2886495026 countsByYear W28864950262022 @default.
- W2886495026 countsByYear W28864950262023 @default.
- W2886495026 crossrefType "journal-article" @default.
- W2886495026 hasAuthorship W2886495026A5014399843 @default.
- W2886495026 hasAuthorship W2886495026A5025542675 @default.
- W2886495026 hasAuthorship W2886495026A5026115376 @default.
- W2886495026 hasAuthorship W2886495026A5032249041 @default.
- W2886495026 hasAuthorship W2886495026A5040789541 @default.
- W2886495026 hasAuthorship W2886495026A5042727705 @default.
- W2886495026 hasAuthorship W2886495026A5045558621 @default.
- W2886495026 hasAuthorship W2886495026A5049195227 @default.
- W2886495026 hasAuthorship W2886495026A5051418089 @default.
- W2886495026 hasAuthorship W2886495026A5054063900 @default.
- W2886495026 hasAuthorship W2886495026A5057710758 @default.
- W2886495026 hasAuthorship W2886495026A5063188500 @default.
- W2886495026 hasAuthorship W2886495026A5079218074 @default.
- W2886495026 hasAuthorship W2886495026A5089405457 @default.
- W2886495026 hasConcept C121332964 @default.
- W2886495026 hasConcept C18903297 @default.
- W2886495026 hasConcept C191897082 @default.
- W2886495026 hasConcept C192562407 @default.
- W2886495026 hasConcept C2777289219 @default.
- W2886495026 hasConcept C49040817 @default.
- W2886495026 hasConcept C525849907 @default.
- W2886495026 hasConcept C544956773 @default.
- W2886495026 hasConcept C550623735 @default.
- W2886495026 hasConcept C86803240 @default.
- W2886495026 hasConceptScore W2886495026C121332964 @default.
- W2886495026 hasConceptScore W2886495026C18903297 @default.