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• W2886776029 endingPage "091301" @default.
• W2886776029 startingPage "091301" @default.
• W2886776029 abstract "We explored the passive–active oxidation boundary for the thermal oxidation of a 4H-SiC(0001) surface. The O2 partial pressure [P(O2)] for passive–active transition was found to be around 0.03 and 0.3 kPa at 1500 and 1600 °C, respectively. We also found that the passive–active oxidation boundary for an Al-implanted surface shifted to a slightly higher P(O2). A metal–oxide–semiconductor field-effect transistor with a gate oxide formed under P(O2) of 0.3 kPa at 1600 °C demonstrated a field-effect mobility of 9.7 cm2 V−1 s−1, which was three times higher than that for a reference sample oxidized in atmospheric oxygen ambient at a moderate temperature and a high threshold voltage stability." @default.
• W2886776029 created "2018-08-22" @default.
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• W2886776029 date "2018-08-02" @default.
• W2886776029 modified "2023-10-17" @default.
• W2886776029 title "Passive–active oxidation boundary for thermal oxidation of 4H-SiC(0001) surface in O₂/Ar gas mixture and its impact on SiO₂/SiC interface quality" @default.
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• W2886776029 doi "https://doi.org/10.7567/apex.11.091301" @default.
• W2886776029 hasPublicationYear "2018" @default.
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