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• W2887156953 endingPage "1548" @default.
• W2887156953 startingPage "1538" @default.
• W2887156953 abstract "We report the first observation of gate-controlled field emission current from a tungsten diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on SiO2/Si substrate. Ni contacted WSe2 monolayer back-gated transistors, under high vacuum, exhibit n-type conduction and drain-bias dependent transfer characteristics, which are attributed to oxygen/water desorption and drain induced Schottky barrier lowering, respectively. The gate-tuned n-type conduction enables field emission, i.e. the extraction of electrons by quantum tunnelling, even from the flat part of the WSe2 monolayers. Electron emission occurs under an electric field ~100 V {mu}m^(-1) and exhibit good time stability. Remarkably, the field emission current can be modulated by the back-gate voltage. The first field-emission vertical transistor based on WSe2 monolayer is thus demonstrated and can pave the way to further optimize new WSe2 based devices for use in vacuum electronics." @default.
• W2887156953 created "2018-08-22" @default.
• W2887156953 creator A5025210927 @default.
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• W2887156953 creator A5069150117 @default.
• W2887156953 creator A5078480964 @default.
• W2887156953 date "2019-01-01" @default.
• W2887156953 modified "2023-10-15" @default.
• W2887156953 title "A WSe₂ vertical field emission transistor" @default.
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• W2887156953 doi "https://doi.org/10.1039/c8nr09068h" @default.
• W2887156953 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/30629066" @default.
• W2887156953 hasPublicationYear "2019" @default.
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