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- W2887569401 abstract "III-V compound semiconductors are promising channel materials for the future low-power and high-performance transistor because of their high electron/hole mobility. Here, we report on the integration of vertical InAs nanowire (NW)-channels on Si by selective-area metalorganic vapor phase epitaxy (MOVPE) with a pulse doping technique and demonstration of an InAs NW vertical surrounding-gate transistors. The device had a small subthreshold slope of 68 mV/decade, a normalized transconductance of 0.25 μS/μm, and on/off ratio of around 107. The axial junction with the pulse doping effectively suppressed off-state leakage current resulting in good electrostatic gate control." @default.
- W2887569401 created "2018-08-22" @default.
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- W2887569401 date "2018-10-01" @default.
- W2887569401 modified "2023-09-27" @default.
- W2887569401 title "Selective-area growth of pulse-doped InAs nanowires on Si and vertical transistor application" @default.
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- W2887569401 doi "https://doi.org/10.1016/j.jcrysgro.2018.07.035" @default.
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