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- W2887718731 abstract "In this paper, a high breakdown voltage of more than 2200 V in high-electron-mobility transistors (HEMTs) with AlGaN channel and a novel ohmic/Schottky-hybrid drain contact is achieved, which is the record breakdown voltage ever achieved on AlGaN-channel HEMTs. The fabricated device exhibits a high on/off ratio of 7×10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>9</sup> and a low subthreshold swing of 64 mV/decade, enabled by the AlGaN channel and wet treatment. Furthermore, it exhibits excellent high-temperature output characteristics and dynamic I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>D</sub> -V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>D</sub> characteristics. Even though both the AlGaN channel and the ohmic/Schottky-hybrid drain have certain impact on the on-state resistance because of the higher sheet resistance and drain contact resistance, these results indicate the significance and potential of AlGaN-channel HEMTs with a hybrid drain architecture in high-voltage applications." @default.
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- W2887718731 date "2018-01-01" @default.
- W2887718731 modified "2023-09-25" @default.
- W2887718731 title "High Breakdown-Voltage (>2200 V) AlGaN-Channel HEMTs With Ohmic/Schottky Hybrid Drains" @default.
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- W2887718731 doi "https://doi.org/10.1109/jeds.2018.2864720" @default.
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