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- W2887756834 abstract "Bi2Te3 is a well-studied material because of its thermoelectric properties and, recently, has also been studied as a topological insulator. However, it is only one of several compounds in the Bi–Te system. This work presents a study of the physical vapor transport growth of Bi–Te material focused on determining the growth conditions required to selectively obtain a desired phase of the Bi–Te system, i.e., Bi2Te3, BiTe, and Bi4Te3. Epitaxial films of these compounds were prepared on sapphire and silicon substrates. The results were verified by X-ray diffraction, Raman spectroscopy, and Rutherford backscattering spectrometry." @default.
- W2887756834 created "2018-08-22" @default.
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- W2887756834 date "2018-08-01" @default.
- W2887756834 modified "2023-09-26" @default.
- W2887756834 title "Controlling the Epitaxial Growth of Bi<sub>2</sub>Te<sub>3</sub>, BiTe, and Bi<sub>4</sub>Te<sub>3</sub>Pure Phases by Physical Vapor Transport" @default.
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- W2887756834 doi "https://doi.org/10.1021/acs.inorgchem.8b01235" @default.
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