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• W2887762012 endingPage "3290" @default.
• W2887762012 startingPage "3283" @default.
• W2887762012 abstract "High-performance nitrogen-doped ZnO (ZnON)-based thin-film transistors (TFTs) were fabricated by atomic layer deposition (ALD) with a rapid purging time of only 5 s at a temperature as low as 150 °C. It is the first time to report ALD ZnON TFT using NH <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> as N source. It is found that ZnON TFT with a N: Zn atomic ratio of 1:19 (ZnON 1:19) exhibited excellent properties, such as lower subthreshold swing of 0.47 V/decade and smaller ΔV <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>th</sub> of 0.71 V under the temperature stress from 25 to 105 °C. The I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON</sub> and I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>OFF</sub> decreased as N-doping concentration increased, and ZnON 1:19 TFT presented a high I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON</sub> /I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>OFF</sub> ratio of 1.75 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>7</sup> . The density of state was calculated by temperature stress. Combining with the X-ray photoelectron spectroscopy analysis, we built a model to explain the reaction mechanism that the moderate amount of N doping could significantly suppress the creation of oxygen defects." @default.
• W2887762012 created "2018-08-22" @default.
• W2887762012 creator A5004563147 @default.
• W2887762012 creator A5034726326 @default.
• W2887762012 creator A5039282075 @default.
• W2887762012 creator A5041947757 @default.
• W2887762012 creator A5060515554 @default.
• W2887762012 creator A5082044139 @default.
• W2887762012 date "2018-08-01" @default.
• W2887762012 modified "2023-10-17" @default.
• W2887762012 title "Nitrogen-Doped ZnO Film Fabricated Via Rapid Low-Temperature Atomic Layer Deposition for High-Performance ZnON Transistors" @default.
• W2887762012 cites W1521283944 @default.
• W2887762012 cites W1938947502 @default.
• W2887762012 cites W1967722749 @default.
• W2887762012 cites W1972915707 @default.
• W2887762012 cites W1975173121 @default.
• W2887762012 cites W1979230434 @default.
• W2887762012 cites W1980627786 @default.
• W2887762012 cites W1981471590 @default.
• W2887762012 cites W1983911872 @default.
• W2887762012 cites W1983986934 @default.
• W2887762012 cites W1987111397 @default.
• W2887762012 cites W1994495097 @default.
• W2887762012 cites W2001294423 @default.
• W2887762012 cites W2008175277 @default.
• W2887762012 cites W2010304729 @default.
• W2887762012 cites W2012367093 @default.
• W2887762012 cites W2015862362 @default.
• W2887762012 cites W2034599606 @default.
• W2887762012 cites W2070237110 @default.
• W2887762012 cites W2071190325 @default.
• W2887762012 cites W2077411632 @default.
• W2887762012 cites W2082353118 @default.
• W2887762012 cites W2082535925 @default.
• W2887762012 cites W2094132508 @default.
• W2887762012 cites W2101586869 @default.
• W2887762012 cites W2135343884 @default.
• W2887762012 cites W2159061212 @default.
• W2887762012 cites W2179298639 @default.
• W2887762012 cites W2306608369 @default.
• W2887762012 cites W2317940165 @default.
• W2887762012 cites W2326848687 @default.
• W2887762012 cites W2328460808 @default.
• W2887762012 cites W2335616050 @default.
• W2887762012 cites W2342612709 @default.
• W2887762012 cites W2485364313 @default.
• W2887762012 cites W2513175409 @default.
• W2887762012 cites W2534423598 @default.
• W2887762012 cites W2550692454 @default.
• W2887762012 cites W2557441202 @default.
• W2887762012 cites W2564857986 @default.
• W2887762012 cites W2580656248 @default.
• W2887762012 cites W2585437193 @default.
• W2887762012 cites W2592788030 @default.
• W2887762012 cites W2596399376 @default.
• W2887762012 cites W2600426447 @default.
• W2887762012 cites W2604941657 @default.
• W2887762012 cites W2620849355 @default.
• W2887762012 cites W2767894508 @default.
• W2887762012 cites W2768238437 @default.
• W2887762012 doi "https://doi.org/10.1109/ted.2018.2848275" @default.
• W2887762012 hasPublicationYear "2018" @default.
• W2887762012 type Work @default.
• W2887762012 sameAs 2887762012 @default.
• W2887762012 citedByCount "20" @default.
• W2887762012 countsByYear W28877620122018 @default.
• W2887762012 countsByYear W28877620122019 @default.
• W2887762012 countsByYear W28877620122020 @default.
• W2887762012 countsByYear W28877620122021 @default.
• W2887762012 countsByYear W28877620122022 @default.
• W2887762012 countsByYear W28877620122023 @default.
• W2887762012 crossrefType "journal-article" @default.
• W2887762012 hasAuthorship W2887762012A5004563147 @default.
• W2887762012 hasAuthorship W2887762012A5034726326 @default.
• W2887762012 hasAuthorship W2887762012A5039282075 @default.
• W2887762012 hasAuthorship W2887762012A5041947757 @default.
• W2887762012 hasAuthorship W2887762012A5060515554 @default.
• W2887762012 hasAuthorship W2887762012A5082044139 @default.
• W2887762012 hasConcept C113196181 @default.
• W2887762012 hasConcept C121332964 @default.
• W2887762012 hasConcept C171250308 @default.
• W2887762012 hasConcept C178790620 @default.
• W2887762012 hasConcept C185592680 @default.
• W2887762012 hasConcept C192562407 @default.
• W2887762012 hasConcept C2779227376 @default.
• W2887762012 hasConcept C49040817 @default.
• W2887762012 hasConcept C57863236 @default.
• W2887762012 hasConcept C87359718 @default.
• W2887762012 hasConceptScore W2887762012C113196181 @default.
• W2887762012 hasConceptScore W2887762012C121332964 @default.
• W2887762012 hasConceptScore W2887762012C171250308 @default.
• W2887762012 hasConceptScore W2887762012C178790620 @default.
• W2887762012 hasConceptScore W2887762012C185592680 @default.
• W2887762012 hasConceptScore W2887762012C192562407 @default.
• W2887762012 hasConceptScore W2887762012C2779227376 @default.
• W2887762012 hasConceptScore W2887762012C49040817 @default.
• W2887762012 hasConceptScore W2887762012C57863236 @default.
• W2887762012 hasConceptScore W2887762012C87359718 @default.

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