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• W2887788230 abstract "We demonstrate lasing in an optically pumped GeSn photonic crystal membrane with 16% of Sn. A guided band-edge mode lased up to 60 K. A good agreement was found between experimental and calculated reduced mode frequencies of the photonic crystal. The active Ge0.84Sn0.16 layer was grown on a step-graded GeSn buffer, limiting thereby the density of misfit dislocations. The thresholds obtained (227 kW/cm2 at 15 K to 340 kW/cm2 at 60 K) were comparable to our previous works on suspended microdisks, highlighting the robustness of the GeSn optical gain against potential surface recombination effects stemming from a high surface-to-volume ratio." @default.
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• W2887788230 date "2018-07-30" @default.
• W2887788230 modified "2023-10-17" @default.
• W2887788230 title "2D hexagonal photonic crystal GeSn laser with 16% Sn content" @default.
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• W2887788230 doi "https://doi.org/10.1063/1.5036739" @default.
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