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- W2888829739 abstract "Gallium oxide (Ga 2 O 3 ) is promising next-generation semiconductor material for high power and low loss devices. Its wide band gap of 4.5-4.9 eV results in a high breakdown field of $sim 8 mathrm{MV}/mathrm{cm}$ and Baliga's FOM of $sim 3400$ . Among several polytypes of Ga 2 O 3 , β-Ga 2 O 3 is the most viable option that can provide cost-effective and high-quality wafers with an edge-defined film-fed growth (EFG) method [1]. Several groups have reported excellent electric characteristics of vertical-type power devices using the β-Ga 2 O 3 wafers [2]–[4]. We also demonstrated Schottky barrier diodes (SBDs) [5], trench metal-oxide-semiconductor SBDs (MOSSBDs) [6], junction barrier Schottky diodes [7], and trench metal-oxide-semiconductor field-effect transistors (MOSFETs) [8]." @default.
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- W2888829739 date "2018-06-01" @default.
- W2888829739 modified "2023-10-04" @default.
- W2888829739 title "Fast Recovery Performance of β-Ga<sub>2</sub>O<sub>3</sub> Trench MOS Schottky Barrier Diodes" @default.
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- W2888829739 doi "https://doi.org/10.1109/drc.2018.8442267" @default.
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