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• W2888844009 abstract "A new Pd nanoparticle (NP)/Pd film/GaO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> / GaN-based metal-oxide-semiconductor diode hydrogen sensor is fabricated and studied. In this paper, appropriate photochemical drop coating and an H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> surface treatment were used to form Pd NPs and a GaO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> dielectric layer. The Pd NPs increased the surface area/volume ratio, and the presence of GaO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> layer led to the effective dissociation of hydrogen molecules. The improved hydrogen sensing properties include a very high sensing response of 1.24 × 107 (in 1% H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /air gas at 300 K) and an extremely low detection level (≤1 ppm H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /air). Furthermore, based on a kinetic adsorption analysis, the activation energy was only 13.1 KJ· mol <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> that is beneficial for hydrogen sensing. The proposed device is therefore promising for high-performance hydrogen sensing applications." @default.
• W2888844009 created "2018-09-07" @default.
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• W2888844009 date "2018-10-01" @default.
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• W2888844009 title "Enhancement of Hydrogen Sensing Performance of a Pd Nanoparticle/Pd Film/GaO_{<italic>x</italic>}/GaN-Based Metal–Oxide– Semiconductor Diode" @default.
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