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• W2889022306 abstract "We report a forming-free resistive switching using a solution-processed silicon nanocrystal (Si NC) thin film. A Si NC thin film is formed on an ITO/glass substrate by spin-coating a colloidal Si NC solution in air. The Si NC thin film shows bipolar resistive switching without a forming process. Electrical characteristics at low temperatures and in various gas environments suggest that a non-stoichiometric SiOx shell on Si NCs contributes to the resistive switching. We propose that the origin of the resistive switching is a conductive filament of oxygen vacancies on the SiOx shell by an electric field." @default.
• W2889022306 created "2018-09-07" @default.
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• W2889022306 date "2018-08-28" @default.
• W2889022306 modified "2023-10-18" @default.
• W2889022306 title "Forming-free resistive switching in solution-processed silicon nanocrystal thin film" @default.
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• W2889022306 doi "https://doi.org/10.1063/1.5032244" @default.
• W2889022306 hasPublicationYear "2018" @default.
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