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• W2889265579 abstract "Abstract Recently, synaptic electronics are attracting increasing attention in neuromorphic engineering. Here, inhibitory synapses are proposed based on nanogranular phosphorous silicate glass gated indium tin oxide transistors operated in pseudodiode mode. Activity dependent inhibitory synaptic behaviors are mimicked on the proposed pseudodiode, including paired pulse depression and depression adaptation behaviors. Interestingly, the proposed inhibitory synapse demonstrates low power dissipation as low as ≈16 fJ for triggering a postsynaptic current with high signal‐to‐noise ratio of ≈2.2. Moreover, the inhibitory synapse demonstrates zero resting power dissipation. The proposed pseudodiode‐based inhibitory artificial synapses may find potential applications in neuromorphic platforms." @default.
• W2889265579 created "2018-09-07" @default.
• W2889265579 creator A5011558214 @default.
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• W2889265579 date "2018-08-27" @default.
• W2889265579 modified "2023-09-26" @default.
• W2889265579 title "Electrolyte Gated Oxide Pseudodiode for Inhibitory Synapse Applications" @default.
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• W2889265579 doi "https://doi.org/10.1002/aelm.201800371" @default.
• W2889265579 hasPublicationYear "2018" @default.
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