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• W2889341688 startingPage "658" @default.
• W2889341688 abstract "Oxide semiconductor Schottky barrier diodes (SBDs) were fabricated by using amorphous In-Ga-Zn-O (IGZO) semiconducting thin films with different atomic ratios. Higher rectification ratios and Schottky barrier heights (SBHs) were obtained when the oxygen partial pressure was high during the sputtering deposition of the IGZO films. The increase in Ga composition effectively enhanced the device characteristics, including the rectification ratio and the SBH of the SBDs. These properties were closely related to the control of oxygen vacancy concentration within the IGZO and the resulting conduction behaviors owing to Fermi-level pinning and tunneling current through the Schottky barrier. The fabricated SBD using IGZO with a higher Ga composition (In:Ga:Zn = 1.0:0.8:0.3) exhibited a rectification ratio of 8.3 × 106 and an SBH of 0.79 eV." @default.
• W2889341688 created "2018-09-07" @default.
• W2889341688 creator A5012731083 @default.
• W2889341688 creator A5059722141 @default.
• W2889341688 creator A5065006154 @default.
• W2889341688 date "2019-01-01" @default.
• W2889341688 modified "2023-09-27" @default.
• W2889341688 title "Device characteristics of Schottky barrier diodes using In-Ga-Zn-O semiconductor thin films with different atomic ratios" @default.
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• W2889341688 doi "https://doi.org/10.1016/j.jallcom.2018.08.289" @default.
• W2889341688 hasPublicationYear "2019" @default.
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