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• W2889679920 abstract "In this brief, an AlGaN/GaN metal-insulator- semiconductor high-electron-mobility transistor (MISHEMT) with pulsed laser deposited AlN interface protection layer (IPL) and trench termination (T <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> ) structure is experimentally and theoretically investigated. The AlN IPL could effectively improve the interface quality and reduce the interface trap density, which is verified by frequency-dependent C-V measurement and conductance method. The T <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> structure extends the depletion region and increases the average electric field (E-field) strength between the gate and drain, achieving an enhanced breakdown voltage (BV). The measured BV and saturated output current density are 412 V and 505 mA/mm for the device at L <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> /L <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>GS</sub> /L <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>GD</sub> /W <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> = 1.5/1.5/5/10 μm, respectively. Compared with the MIS-HEMT without T <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> structure, the proposed device increases the BV by 63%." @default.
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• W2889679920 date "2018-11-01" @default.
• W2889679920 modified "2023-10-18" @default.
• W2889679920 title "AlGaN/GaN MIS-HEMT With AlN Interface Protection Layer and Trench Termination Structure" @default.
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• W2889679920 doi "https://doi.org/10.1109/ted.2018.2868104" @default.
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