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• W2890124974 endingPage "11UF06" @default.
• W2890124974 startingPage "11UF06" @default.
• W2890124974 abstract "In this study, we investigate the crystallization behavior of the precursor HfO2–ZrO2 (HZO) thin film to increase the fraction of the ferroelectric phase with orthorhombic symmetry in the resulting crystallized films. The precursor film of Hf0.5Zr0.5O2 prepared by the chemical solution deposition (CSD) process was crystallized to the tetragonal phase (at 600 °C) or a mixture of the orthorhombic and monoclinic phases (at 700 °C and above), depending on the crystallization temperature. A saturated P–E hysteresis loop with a remanent polarization (Pr) of 8 µC/cm2 was observed for the HZO films crystallized at 700 °C, whereas a distorted P–E curve with a lower Pr value was confirmed for the film crystallized at 600 °C." @default.
• W2890124974 created "2018-09-27" @default.
• W2890124974 creator A5023888355 @default.
• W2890124974 creator A5027379524 @default.
• W2890124974 creator A5063244000 @default.
• W2890124974 date "2018-09-13" @default.
• W2890124974 modified "2023-10-05" @default.
• W2890124974 title "Crystallization behavior and ferroelectric property of HfO₂–ZrO₂ films fabricated by chemical solution deposition" @default.
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• W2890124974 doi "https://doi.org/10.7567/jjap.57.11uf06" @default.
• W2890124974 hasPublicationYear "2018" @default.
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