FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2890147176> ?p ?o ?g. }

• W2890147176 endingPage "32827" @default.
• W2890147176 startingPage "32818" @default.
• W2890147176 abstract "The transformation of an oxide substrate by its reaction with a chemical precursor during atomic layer deposition (ALD) has not attracted much attention, as films are typically deposited on top of the oxide substrate. However, any modification to the substrate surface can impact the electrical and optical properties of the device. We demonstrate herein the ability of a precursor to react deep within an oxide substrate to form an interfacial layer that is distinct from both the substrate and deposited film. This phenomenon is studied using a scandium precursor, Sc(MeCp)2(Me2pz) (1, MeCp = methylcyclopentadienyl, Me2pz = 3,5-dimethylpyrazolate), and five oxide substrates (SiO2, ZnO, Al2O3, TiO2, and HfO2). In situ Fourier transform infrared (FTIR) spectroscopy shows that at moderate temperatures (∼150 °C) the pyrazolate group of 1 reacts with the surface hydroxyl groups of OH-terminated SiO2 substrates. However, at slightly higher temperatures (≥225 °C) typically used for the ALD of Sc2O3, there is a direct reaction between 1 and the SiO2 layer, in addition to chemisorption at the surface hydroxyl groups. This reaction is sustained by sequential exposures of 1 until an ∼2 nm thick passivating interface layer is formed, indicating that 1 reacts with oxygen derived from SiO2. A shift of the Si 2p core level position, measured by ex situ X-ray photoelectron spectroscopy, is consistent with the formation of a ScSixOy layer. Similar observations are made following the exposure of a ZnO substrate to 1 at 275 °C. In contrast, Al2O3, TiO2, and HfO2 substrates remain resistant to reaction with 1 under similar conditions, except for a surface reaction occurring in the case of TiO2. These striking observations are attributed to the differences in the electrochemical potentials of the elements comprising the oxide substrates to that of scandium. Precursor 1 can react with SiO2 or ZnO substrates, since the constituent elements of these oxides have less-negative electrochemical potentials than do aluminum, titanium, and hafnium. Additionally, Sc2O3 and surface carbonates are deposited on all substrates by gas-phase reactions between 1 and residual water vapor in the reactor. The extent of gas-phase reactions contributing to film growth is governed by the relative pressure of water vapor in the presence of 1. These results suggest caution when using very reactive, oxophilic precursors such as 1 to avoid misinterpreting unconventional film deposition as that resulting from a standard ALD process." @default.
• W2890147176 created "2018-09-27" @default.
• W2890147176 creator A5008199290 @default.
• W2890147176 creator A5028594815 @default.
• W2890147176 creator A5042769203 @default.
• W2890147176 creator A5051239060 @default.
• W2890147176 creator A5088663837 @default.
• W2890147176 date "2018-09-13" @default.
• W2890147176 modified "2023-09-27" @default.
• W2890147176 title "Selective Growth of Interface Layers from Reactions of Sc(MeCp)₂(Me₂pz) with Oxide Substrates" @default.
• W2890147176 cites W1493835177 @default.
• W2890147176 cites W1547656175 @default.
• W2890147176 cites W1620028733 @default.
• W2890147176 cites W1642436573 @default.
• W2890147176 cites W1665816043 @default.
• W2890147176 cites W1963754726 @default.
• W2890147176 cites W1965958956 @default.
• W2890147176 cites W1969141180 @default.
• W2890147176 cites W1973980911 @default.
• W2890147176 cites W1974189710 @default.
• W2890147176 cites W1981141489 @default.
• W2890147176 cites W1981804000 @default.
• W2890147176 cites W1996097260 @default.
• W2890147176 cites W2000094193 @default.
• W2890147176 cites W2005021149 @default.
• W2890147176 cites W2007615300 @default.
• W2890147176 cites W2010080749 @default.
• W2890147176 cites W2023603575 @default.
• W2890147176 cites W2029337632 @default.
• W2890147176 cites W2031695124 @default.
• W2890147176 cites W2031756195 @default.
• W2890147176 cites W2033554694 @default.
• W2890147176 cites W2035007281 @default.
• W2890147176 cites W2039823325 @default.
• W2890147176 cites W2040274530 @default.
• W2890147176 cites W2041886015 @default.
• W2890147176 cites W2042052988 @default.
• W2890147176 cites W2042405054 @default.
• W2890147176 cites W2043219308 @default.
• W2890147176 cites W2047373339 @default.
• W2890147176 cites W2052649239 @default.
• W2890147176 cites W2052659573 @default.
• W2890147176 cites W2053450209 @default.
• W2890147176 cites W2053791172 @default.
• W2890147176 cites W2058594123 @default.
• W2890147176 cites W2063140846 @default.
• W2890147176 cites W2071829982 @default.
• W2890147176 cites W2072759665 @default.
• W2890147176 cites W2073816687 @default.
• W2890147176 cites W2076691085 @default.
• W2890147176 cites W2077213801 @default.
• W2890147176 cites W2082293265 @default.
• W2890147176 cites W2082932717 @default.
• W2890147176 cites W2090029586 @default.
• W2890147176 cites W2091487320 @default.
• W2890147176 cites W2092584346 @default.
• W2890147176 cites W2093196984 @default.
• W2890147176 cites W2102458125 @default.
• W2890147176 cites W2103087892 @default.
• W2890147176 cites W2112297827 @default.
• W2890147176 cites W2117517212 @default.
• W2890147176 cites W2119370786 @default.
• W2890147176 cites W2124594904 @default.
• W2890147176 cites W2134856500 @default.
• W2890147176 cites W2136763778 @default.
• W2890147176 cites W2156743143 @default.
• W2890147176 cites W2158932701 @default.
• W2890147176 cites W2171645445 @default.
• W2890147176 cites W2305464105 @default.
• W2890147176 cites W2319536290 @default.
• W2890147176 cites W2330897627 @default.
• W2890147176 cites W2333715033 @default.
• W2890147176 cites W2338531773 @default.
• W2890147176 cites W2469297558 @default.
• W2890147176 cites W2473713662 @default.
• W2890147176 cites W2475485218 @default.
• W2890147176 cites W2489402428 @default.
• W2890147176 cites W2569150658 @default.
• W2890147176 cites W2569654522 @default.
• W2890147176 cites W2594473513 @default.
• W2890147176 cites W2783784752 @default.
• W2890147176 cites W2801101189 @default.
• W2890147176 cites W2883407801 @default.
• W2890147176 cites W2951759592 @default.
• W2890147176 cites W565854973 @default.
• W2890147176 doi "https://doi.org/10.1021/acsami.8b09264" @default.
• W2890147176 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/30211529" @default.
• W2890147176 hasPublicationYear "2018" @default.
• W2890147176 type Work @default.
• W2890147176 sameAs 2890147176 @default.
• W2890147176 citedByCount "4" @default.
• W2890147176 countsByYear W28901471762019 @default.
• W2890147176 countsByYear W28901471762022 @default.
• W2890147176 crossrefType "journal-article" @default.
• W2890147176 hasAuthorship W2890147176A5008199290 @default.
• W2890147176 hasAuthorship W2890147176A5028594815 @default.
• W2890147176 hasAuthorship W2890147176A5042769203 @default.
• W2890147176 hasAuthorship W2890147176A5051239060 @default.

• next