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• W2890196352 abstract "This letter reports high-quality plasma-assisted atomic-layer-deposited HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>y</sub> by using isopropyl alcohol (IPA) oxidant and cyclic N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> plasma treatment demonstrated on n-type In <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.53</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.47</sub> As. Improved interface characteristics, with suppressed frequency dispersion and surface oxidation, were demonstrated and resulted in significantly decreased interface trap density (D <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>it</sub> ) of 4.5 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>11</sup> eV <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-2</sup> at the mid-gap level with outstanding inversion behaviors. In addition, to verify true inversion, transition frequency (ωm) of 4 kHz was extracted. The improvement mechanism of the proposed technology is assumed to be that nitrogen plasma reduces oxygen vacancies that act as oxygen diffusion paths and with the use of IPA oxidant the interface would be strongly protected during pre- and post-dielectric deposition." @default.
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• W2890196352 date "2018-11-01" @default.
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• W2890196352 title "Enhanced Interface Characteristics of PA-ALD HfO_xN_y/InGaAs MOSCAPs Using IPA Oxygen Reactant and Cyclic N₂ Plasma" @default.
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• W2890196352 doi "https://doi.org/10.1109/led.2018.2870176" @default.
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