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- W2890199893 abstract "Abstract We review the recent achievements in the epitaxial integration of III-Sb-based semiconductor lasers on Si substrates. Much work has been done on substrate preparation and III-Sb on Si nucleation, which allowed demonstrating GaInAsSb/AlGaAsSb quantum-well laser diodes operating in continuous wave above room temperature in the 1.5–2.3 μm range and InAs/AlSb quantum cascade lasers emitting near 11 μm operating up to 400 K. Although work remains to be done, in particular toward crystal defect density reduction, the wide wavelength range at reach with the III-Sb technology opens the way to the development of a large portfolio of mid-IR sensing systems." @default.
- W2890199893 created "2018-09-27" @default.
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- W2890199893 date "2018-01-01" @default.
- W2890199893 modified "2023-10-18" @default.
- W2890199893 title "Epitaxial Integration of Antimonide-Based Semiconductor Lasers on Si" @default.
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- W2890199893 doi "https://doi.org/10.1016/bs.semsem.2018.08.002" @default.
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