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- W2890246290 abstract "The electronic properties of the passive films growth on Cu-Ni alloys were investigated via a sensitive method by employing Mott-Schottky analysis, point defect model (PDM) in conjunction with power-law model (PLM), which was employed to accurately analyze the constant phase element (CPE) behavior of the passive films. Results indicate that the passive films exhibit p-type semi-conductive characteristics with acceptor densities of 1.74–6.47 × 1020 cm3, and the condensation of cation vacancies () is mainly responsibility for the passivity breakdown. The diffusion coefficient (D) of the passive films growth on Cu-Ni alloy is of the order of 10–16 cm2 s−1. The Ni cation interstitial would occupy a metal lattice site (NiCu) and consume the resulting in decrease of acceptor density, defect flux and superior corrosion resistance. In addition, the calculated lattice parameter of Cu2O (4.17 A) is acceptably close to the theoretical value (4.26 A), verifying the veracity of the analytic approach proposed in this paper to describe semi-conductive properties of the formed passive films." @default.
- W2890246290 created "2018-09-27" @default.
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- W2890246290 date "2018-09-14" @default.
- W2890246290 modified "2023-10-17" @default.
- W2890246290 title "Electronic properties of the passive films growth on Cu-Ni alloy from the viewpoint of point defect model and power-law model" @default.
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- W2890246290 doi "https://doi.org/10.1088/2053-1591/aadec7" @default.
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