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• W2890438884 abstract "Wide bandgap semiconductors have become the most attractive materials in optoelectronics in the last decade. Their wide bandgap and intrinsic properties have advanced the development of reliable photodetectors to selectively detect short wavelengths (i.e., ultraviolet, UV) in high temperature regions (up to 300°C). The main driver for the development of high-temperature UV detection instrumentation is in-situ monitoring of hostile environments and processes found within industrial, automotive, aerospace, and energy production systems that emit UV signatures. In this review, a summary of the optical performance (in terms of photocurrent-to-dark current ratio, responsivity, quantum efficiency, and response time) and uncooled, high-temperature characterization of III-nitride, SiC, and other wide bandgap semiconductor UV photodetectors is presented." @default.
• W2890438884 created "2018-09-27" @default.
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• W2890438884 date "2018-09-19" @default.
• W2890438884 modified "2023-09-27" @default.
• W2890438884 title "High-temperature Ultraviolet Photodetectors: A Review" @default.
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• W2890438884 hasPublicationYear "2018" @default.
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