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- W2890624854 abstract "The near-infrared spectral region is being used for various fields of applications. Near infrared emitters based on InGaN-ZnSnN2 material systems have not been proposed yet. In this paper, a novel type-II InGaN-ZnSnN2/GaN quantum well (QW) light emitting diode structure is presented for the near-infrared emission. Computations are based on the self-consistent solutions of Schrödinger and Poison equations. In the proposed structure, the emission wavelength (λ) and the overlap of electron and hole wave functions (Meh) are studied with current densities, for different dopings, compositions and well widths of the structure. It is found that the Meh and the radiative efficiency are more than 30% and 40% respectively. The large overlap of electron and hole wavefunctions should make QW light emitting diodes in the near infrared range based on these structures feasible." @default.
- W2890624854 created "2018-09-27" @default.
- W2890624854 creator A5004062302 @default.
- W2890624854 date "2018-11-01" @default.
- W2890624854 modified "2023-09-23" @default.
- W2890624854 title "Near-infrared light emitting diodes based on the type-II InGaN-ZnSnN2/GaN quantum wells" @default.
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- W2890624854 doi "https://doi.org/10.1016/j.optmat.2018.09.005" @default.
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