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• W2890792761 abstract "We investigated the growth of III-N/graphene heterostructures as a single process in a MOVPE reactor. Raman spectra revealed that graphene can be successfully deposited on sapphire substrate by propane pyrolysis if temperature exceeds 1060 °C and hydrogen is used as a carrier gas. GaN epitaxial layers and heterostructures on such graphene using both high-temperature AlN buffer layer and low-temperature GaN nucleation layer was demonstrated. Analysis of surface morphology and X-Ray diffraction curves indicate that GaN quality depends on graphene thickness. Use of copper electroplated Ni-based contact layer combined with thermal shock allows exfoliation of large-area III-N LED structures from sapphire." @default.
• W2890792761 created "2018-09-27" @default.
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• W2890792761 date "2018-12-01" @default.
• W2890792761 modified "2023-09-24" @default.
• W2890792761 title "Growth of III-N/graphene heterostructures in single vapor phase epitaxial process" @default.
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• W2890792761 doi "https://doi.org/10.1016/j.jcrysgro.2018.09.017" @default.
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