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• W2890813148 abstract "Abstract The phase mode atomic force microscopy (AFM) lithography and monolayer lift‐off process are combined to fabricate electronics based on 2D materials (2DMs), which remove the need for pre‐fabricating markers and increase the accuracy of the overlay and alignment. The promising phase mode of AFM lithography eliminates the drawbacks of the conventional force mode such as the over‐cut, under‐cut, debris effect, and severe tip wear. The planar size of MoS 2 thin‐film transistors is shrunken down to sub‐micrometer by the proposed method, and the fabricated devices demonstrate n‐type characteristics. It offers a more flexible and easier way to fabricate prototypes of sub‐micrometer‐sized 2DMs based devices, and gives the opportunity to explore the size effect on the performance of 2DMs devices." @default.
• W2890813148 created "2018-09-27" @default.
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• W2890813148 date "2018-09-21" @default.
• W2890813148 modified "2023-10-14" @default.
• W2890813148 title "Fabrication of Sub-Micrometer-Sized MoS₂ Thin-Film Transistor by Phase Mode AFM Lithography" @default.
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• W2890813148 doi "https://doi.org/10.1002/smll.201803273" @default.
• W2890813148 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/30239118" @default.
• W2890813148 hasPublicationYear "2018" @default.
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