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• W2890846137 abstract "In plasma enhanced chemical vapor deposition, the substrate placed directly on a metallic electrode, such as an insulator, will often be processed by plasma, while it will also affect the plasma in return. In this paper, the effect of coating the electrode and dielectric ring by a dielectric layer (several mm) on a radio frequency capacitively coupled plasma sustained in a SiH4/N2/O2 gas mixture is investigated by means of a two-dimensional self-consistent fluid model. The simulation results show that the introduction of the dielectric layer on the lower electrode can effectively suppress the edge effect, leading to the radial heterogeneity of the plasma, compared with modulating the pressure and electrode spacing. In addition, considering that the gas-phase deposition precursors have not been well confirmed in the SiH4/N2/O2 gas mixture, we have investigated the nitrogen-, silicon-, and oxygen-containing species as functions of the pressure and composition ratio of the mixed gas. It is found that SiH3O, SiH2O, O, N, and NO may be the most important deposition precursors rather than SiN and HSiNH2. Furthermore, we calculate the deposition rates of Si, O, and N atoms and find that those of Si and O atoms are greatly influenced by the pressure and gas composition ratio. However, the deposition rate of the N atom seems to be not sensitive to the external parameters owing to the fact that two main precursors N and NO of the N atom exhibit opposite trends as the external parameters change." @default.
• W2890846137 created "2018-09-27" @default.
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• W2890846137 date "2018-09-01" @default.
• W2890846137 modified "2023-10-04" @default.
• W2890846137 title "Two-dimensional fluid simulation of a radio frequency capacitively coupled plasma in SiH₄/N₂/O₂" @default.
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• W2890846137 doi "https://doi.org/10.1063/1.5008586" @default.
• W2890846137 hasPublicationYear "2018" @default.
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