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• W2890870570 abstract "Metal-insulator-semiconductor (MIS) GaN-based Schottky diodes with an ultra-thin in situ deposited Si3N4 dielectric are fabricated and characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The leakage current of the reverse biased diodes is found to depend strongly on Si3N4 deposition temperature, with an activation energy of 7.3 eV, and reactor atmosphere (N2 versus H2). The dependence is attributed to point defects originating from the deviation of Si3N4 from stoichiometric composition. Deposition of Si3N4 at low temperatures is shown to substantially suppress the leakage current. The effective barrier heights in the MIS Schottky diodes are also affected by Si3N4 deposition conditions and, in particular, by the deposition temperature." @default.
• W2890870570 created "2018-09-27" @default.
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• W2890870570 date "2018-10-11" @default.
• W2890870570 modified "2023-09-27" @default.
• W2890870570 title "Dependence of leakage current in Ni/Si₃N₄/n-GaN Schottky diodes on deposition conditions of silicon nitride" @default.
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• W2890870570 doi "https://doi.org/10.1088/1361-6641/aae242" @default.
• W2890870570 hasPublicationYear "2018" @default.
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