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• W2890888495 abstract "Deep acceptor doping of β-Ga2O3 with Mg and N was demonstrated by implantation of the impurity ions into n-type bulk substrates. Systematic physical and electrical characterizations were performed to demonstrate recovery of the implantation-damaged crystals and electrical activation of the dopant atoms by thermal annealing at 1000–1200 °C in an N2 atmosphere. N was found to exhibit much lower thermal diffusivity than Mg, thus enabling the use of higher annealing temperatures to maximize N activation efficiency without significantly altering the impurity profile. Consequently, an n-Ga2O3/Ga2O3:N/n-Ga2O3 structure was capable of sustaining a much larger voltage across its end terminals than its Mg-doped counterpart. The development of an ion implantation technology for acceptor doping of β-Ga2O3 creates unique opportunities for designing and engineering a variety of high-voltage β-Ga2O3 devices." @default.
• W2890888495 created "2018-09-27" @default.
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• W2890888495 date "2018-09-03" @default.
• W2890888495 modified "2023-10-03" @default.
• W2890888495 title "Acceptor doping of <i>β</i>-Ga₂O₃ by Mg and N ion implantations" @default.
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• W2890888495 doi "https://doi.org/10.1063/1.5050040" @default.
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