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- W2890932885 abstract "The benefits of Silicon on Insulator (SOI) technology are to reduce parasitic device capacitance, improving performance as well as smaller build area. Current delayering method to reveal polysilicon using 49% Hydrofluoric (HF) concentration is not suitable for SOI wafer. Furthermore, the method cannot remove small, thin and dense gate poly such as in Static Random Access Memory (SRAM) cells. The implication of the current method will cause Top Silicon to be damaged. A parallel lapping is used to improve surface flatness while exposing the polysilicon layer. Subsequently, Poly-etchant is employed to etch the exposed polysilicon and remaining the oxides. An optimum HF's concentration and etching time are crucial in order to etch the remaining oxides while protect Top Silicon from damage during SOI delayering process. The idea is to halt the oxide etching somewhere in Deep Trench Isolation (DTI) without delaminating Top Silicon on Buried Oxide (BOX). In addition to this process, Interlayer Dielectric (ILD) oxide, Gate Oxide (GOX) and polysilicon layer can be removed completely. Hence, 20% HF and 10 minutes etching time (HFt) followed by supersonic cleaning is a recommended combination for a complete removal of remaining layers on silicon surface, such as metals, polysilicon, nitride, and oxides. A clean exposed silicon substrate is vital to allow wet etchant solution to be carried out successfully to reveal silicon defects. Improved delayering method of Parallel Lapping → Poly-Etchant → Diluted and Time Controlled Hydrofluoric Acid Etching is capable to remove thin and dense polysilicon precisely without damaging the Top Silicon made it suitable for SOI technology." @default.
- W2890932885 created "2018-09-27" @default.
- W2890932885 creator A5010110511 @default.
- W2890932885 creator A5042266385 @default.
- W2890932885 creator A5057110077 @default.
- W2890932885 creator A5066128140 @default.
- W2890932885 creator A5067355528 @default.
- W2890932885 creator A5081822801 @default.
- W2890932885 date "2018-07-01" @default.
- W2890932885 modified "2023-09-26" @default.
- W2890932885 title "Improved Delayering Method for SOI Wafer Processing" @default.
- W2890932885 cites W1674688552 @default.
- W2890932885 cites W1977232186 @default.
- W2890932885 cites W2005002667 @default.
- W2890932885 cites W2080116905 @default.
- W2890932885 cites W2130583547 @default.
- W2890932885 cites W2147202321 @default.
- W2890932885 doi "https://doi.org/10.1109/ipfa.2018.8452522" @default.
- W2890932885 hasPublicationYear "2018" @default.
- W2890932885 type Work @default.
- W2890932885 sameAs 2890932885 @default.
- W2890932885 citedByCount "1" @default.
- W2890932885 countsByYear W28909328852022 @default.
- W2890932885 crossrefType "proceedings-article" @default.
- W2890932885 hasAuthorship W2890932885A5010110511 @default.
- W2890932885 hasAuthorship W2890932885A5042266385 @default.
- W2890932885 hasAuthorship W2890932885A5057110077 @default.
- W2890932885 hasAuthorship W2890932885A5066128140 @default.
- W2890932885 hasAuthorship W2890932885A5067355528 @default.
- W2890932885 hasAuthorship W2890932885A5081822801 @default.
- W2890932885 hasBestOaLocation W28909328852 @default.
- W2890932885 hasConcept C127413603 @default.
- W2890932885 hasConcept C160671074 @default.
- W2890932885 hasConcept C192562407 @default.
- W2890932885 hasConcept C24326235 @default.
- W2890932885 hasConcept C41008148 @default.
- W2890932885 hasConcept C49040817 @default.
- W2890932885 hasConcept C53143962 @default.
- W2890932885 hasConcept C544956773 @default.
- W2890932885 hasConceptScore W2890932885C127413603 @default.
- W2890932885 hasConceptScore W2890932885C160671074 @default.
- W2890932885 hasConceptScore W2890932885C192562407 @default.
- W2890932885 hasConceptScore W2890932885C24326235 @default.
- W2890932885 hasConceptScore W2890932885C41008148 @default.
- W2890932885 hasConceptScore W2890932885C49040817 @default.
- W2890932885 hasConceptScore W2890932885C53143962 @default.
- W2890932885 hasConceptScore W2890932885C544956773 @default.
- W2890932885 hasLocation W28909328851 @default.
- W2890932885 hasLocation W28909328852 @default.
- W2890932885 hasOpenAccess W2890932885 @default.
- W2890932885 hasPrimaryLocation W28909328851 @default.
- W2890932885 hasRelatedWork W1536397480 @default.
- W2890932885 hasRelatedWork W1787443341 @default.
- W2890932885 hasRelatedWork W2010481829 @default.
- W2890932885 hasRelatedWork W2045702322 @default.
- W2890932885 hasRelatedWork W2046673774 @default.
- W2890932885 hasRelatedWork W2171956588 @default.
- W2890932885 hasRelatedWork W2352772338 @default.
- W2890932885 hasRelatedWork W2469636863 @default.
- W2890932885 hasRelatedWork W2739266119 @default.
- W2890932885 hasRelatedWork W2527560532 @default.
- W2890932885 isParatext "false" @default.
- W2890932885 isRetracted "false" @default.
- W2890932885 magId "2890932885" @default.
- W2890932885 workType "article" @default.