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• W2890948591 abstract "Presently, models to describe surface roughness scattering combine intrinsic and extrinsic effects, where extrinsic effects include process-induced interactions and intrinsic effects are due to inherent atomic structure. In this work, we present a general method for extracting the intrinsic surface roughness scattering rate of a material interface from the atomic structure, using Density Functional Theory and Fermi's Golden Rule. We find for the case of the 4H-SiC/SiO2 interface, intrinsic surface roughness mobility is several orders of magnitude greater than the extrinsic mobility which depends on process induced nonidealities. This result suggests that a path forward for higher mobility SiC devices may be the reduction of extrinsic miscut roughness." @default.
• W2890948591 created "2018-09-27" @default.
• W2890948591 creator A5006332422 @default.
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• W2890948591 date "2018-09-14" @default.
• W2890948591 modified "2023-09-24" @default.
• W2890948591 title "The intrinsic atomic-level surface roughness mobility limit of 4H-SiC" @default.
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• W2890948591 doi "https://doi.org/10.1063/1.5042765" @default.
• W2890948591 hasPublicationYear "2018" @default.
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