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- W2890984218 abstract "Beta-gallium oxide (BGO) radio frequency device performance is presented using sub-micron T-shaped gates. In the first design, a gate-recess is implemented to allow gate and channel device scaling which results in f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>t</sub> /f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>max</sub> = 3/13 GHz at VDS= 40 V. The second approach uses a thin and higher doped channel with a T-gate formed by electron beam lithography. An f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>t</sub> /f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>max</sub> = 5/17 GHz is measured at V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>DS</sub> = 15 V and is the highest reported for BGO transistors. Significant gains in RF performance are expected with reduction of device parasitics and vertically scaled epitaxial designs." @default.
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- W2890984218 date "2018-07-01" @default.
- W2890984218 modified "2023-10-03" @default.
- W2890984218 title "Sub-Micron Gallium Oxide Radio Frequency Field-Effect Transistors" @default.
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- W2890984218 doi "https://doi.org/10.1109/imws-amp.2018.8457153" @default.
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