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• W2890985867 abstract "The growth, structure, optical, electrical and thermoelectric properties of calcium silicides of various compositions on silicon substrates with (100) and (111) orientations were experimentally studied. It was found that when the atoms of Ca and Si are co-deposited on atomically clean silicon, the basis phases in the composition of the formed films depends on the substrate temperature and the annealing temperature: Ca 2 Si (T Si = 20°C, T ann = 330°C), CaSi (T Si = 190-320°C, T ann = 330°C) and CaSi 2 (T Si = 500°C). It was established that the Ca 2 Si phase is a direct-gap semiconductor with a band gap of 0.82±0.02 eV, large contribution of defect levels to the absorption coefficient at energies 0.25 - 0.50 eV and huge transmission up 90% in the far IR region. In CaSi-based films the high transmission (30-40%) up to 25 μm was observed, which corresponds to a semimetal with a constant density of states near the Fermi level. It was found that CaSi-based films have the maximum Seebeck coefficient and the power factor (up to 430 μV/K and up to 1.14 × 10 -6 W/(K 2 m), respectively) at 330K. CaSi 2 films with CaSi 2 lattice stretching and epitaxial ordering relative to the Si (100) substrate exhibit semimetal properties, with very high conductivity and light transparency (up 12%) in the photon energy range 0.06 - 0.65 eV." @default.
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• W2890985867 date "2018-09-01" @default.
• W2890985867 modified "2023-09-27" @default.
• W2890985867 title "Comparison of the Structural, Optical and Thermoelectrical Properties of Ca Silicide Films with Variable Composition on Si Substrates" @default.
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• W2890985867 doi "https://doi.org/10.4028/www.scientific.net/ddf.386.3" @default.
• W2890985867 hasPublicationYear "2018" @default.
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