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• W2891014911 abstract "This paper presents a correlation study between experimental results of titanium dioxide (TiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> )-based memristors and various hyperbolic sine function models. The current-voltage (I-V) characteristics of sol-gel-derived TiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> thin film annealed at 250°C were correlated with the reported hyperbolic sine function simulation program with integrated circuit emphasis memristor models. The correlation study showed that the existing models were not fitted well with our experimental data. The models with the lowest root means square errors were then combined together to achieve better fitting result. Further, experimental results of TiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> thin films fabricated by varying the annealing temperature at 350 °C and 450 °C were correlated to the proposed model to further elucidate the device operation. The parameters were then analyzed by multiplying and dividing the simulation results by two. It was found that both the Schottky and tunneling mechanisms had a significant impact in shaping the I-V characteristic of annealed TiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> thin film and device conductivity. The state variable derivative on the other hand caused changes in device threshold voltage. The knowledge gained from the fitting parameters of the proposed model enables us to predict the performance of fabricated memristive device and engineer the process parameters for desired memristive behavior." @default.
• W2891014911 created "2018-09-27" @default.
• W2891014911 creator A5002657873 @default.
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• W2891014911 date "2018-01-01" @default.
• W2891014911 modified "2023-09-26" @default.
• W2891014911 title "Titanium Dioxide-Based Memristive Thin Film: A Correlation Study Between the Experimental Work and Simulation Program With Integrated Circuit Emphasis Hyperbolic Sine Models" @default.
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• W2891014911 doi "https://doi.org/10.1109/jeds.2018.2864791" @default.
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