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- W2891037614 abstract "SiGe channel is widely used because carrier mobilities of SiGe arehigher than those of Si. C or Ge ion implantation in the source/drainregion is expected to be effective to induce tensile or compressivestrain, respectively, in the SiGe channel. Laser annealing enables toremove lattice damage efficiently with minimum thermal budget. Inthis study, laser-annealed SiGe thin layers with and without C or Geimplantation were evaluated by Raman spectroscopy and X-rayPhotoelectron Spectroscopy (XPS). We demonstrated the effect ofC or Ge implantation as well as Ge redistribution by the laserannealing on the Raman peak shift." @default.
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- W2891037614 date "2018-07-20" @default.
- W2891037614 modified "2023-10-02" @default.
- W2891037614 title "Strain Evaluation of Laser-Annealed SiGe Thin Layers" @default.
- W2891037614 doi "https://doi.org/10.1149/08607.0059ecst" @default.
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