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• W2891086626 abstract "We propose a planar device architecture compatible with the CMOS process technology as the optimal current benchmark of a Si-nanowire (NW) thermoelectric (TE) power generator. The proposed device is driven by a temperature gradient that is formed in the proximity of a perpendicular heat flow to the substrate. Therefore, unlike the conventional TE generators, the planar short Si-NWs need not be suspended on a cavity structure. Under an externally applied temperature difference of 5 K, the recorded TE power density is observed to be 12 μm/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> by shortening the Si-NWs length and suppressing the parasitic thermal resistance of the Si substrate. The demonstration paves a pathway to develop cost-effective autonomous internet-of-things applications that utilize the environmental and body heats." @default.
• W2891086626 created "2018-09-27" @default.
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• W2891086626 date "2018-11-01" @default.
• W2891086626 modified "2023-10-17" @default.
• W2891086626 title "Modeling, Simulation, Fabrication, and Characterization of a 10-<inline-formula> <tex-math notation=LaTeX>$mu$ </tex-math> </inline-formula>W/cm² Class Si-Nanowire Thermoelectric Generator for IoT Applications" @default.
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• W2891086626 doi "https://doi.org/10.1109/ted.2018.2867845" @default.
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