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- W2891148598 abstract "The performance of n-type silicon nanosheets, nanowires, and FinFETs is benchmarked by Monte Carlo (MC) device simulation. Measurements of nanowire transfer characteristics are provided to validate the MC model supplemented by a corresponding comparison for nanosheets with literature data. At an OFF-current per effective gate width of 10 nA/μm, the ON-currents of nanowires, FinFETs, and nanosheets are 500, 545, and 570 μA/μm, respectively. A major reason for this inferior nanowire performance is found to be the stronger impact of surface roughness scattering in nanowires due to a higher surface-to-volume ratio. However, the nanowires' performance disadvantage is reduced for shorter gate lengths due to their better electrostatic control and reduced impact of surface roughness upon scaling." @default.
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- W2891148598 date "2018-11-01" @default.
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- W2891148598 title "Performance Comparison of <inline-formula> <tex-math notation=LaTeX>${n}$ </tex-math> </inline-formula>–Type Si Nanowires, Nanosheets, and FinFETs by MC Device Simulation" @default.
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- W2891148598 doi "https://doi.org/10.1109/led.2018.2868379" @default.
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