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- W2891161925 abstract "The abstract in [1] is incorrect. The word “photograph” was used in error rather than the more correct, “photo.” The abstract should read: In this paper, the evolution of various lithographic processes aimed at fabricating robust tantalum nitride (TaN) resistors in GaAs-based BiFET and BiHEMT technologies are discussed in detail. Such approaches include the common image reverse photo process (via amine poisoning) using a positive tone resist, the use of a chemically amplified negative tone resist, and also straight patterning of a positive tone resist. The aforementioned approaches were found to have their own unique challenges as it applied to printing robust TaN-based resistors approaching nearly a micron in width which is needed for high density mixed signal designs. We will explore many of these challenges in detail for the various lithography schemes." @default.
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- W2891161925 date "2018-11-01" @default.
- W2891161925 modified "2023-09-24" @default.
- W2891161925 title "Evolution, Challenges and Attributes of Near Micron Sized TaN Resistors for Mixed Signal IC Applications From a Lithography Perspective" @default.
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- W2891161925 doi "https://doi.org/10.1109/tsm.2018.2870569" @default.
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