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• W2891240130 endingPage "18650" @default.
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• W2891240130 abstract "Flexible optoelectronic devices facilitated by the piezotronic effect have important applications in the near future in many different fields ranging from solid-state lighting to biomedicine. Two-dimensional materials possessing extraordinary mechanical strength and semiconducting properties are essential for realizing nanopiezotronics and piezo-phototronics. Here, we report the first demonstration of piezo-phototronic properties in In1-xSnxSe flexible devices by applying systematic mechanical strain under photoexcitation. Interestingly, we discover that the dark current and photocurrent are increased by five times under a bending strain of 2.7% with a maximum photoresponsivity of 1037 AW-1. In addition, the device can act as a strain sensor with a strain sensitivity up to 206. Based on these values, the device outperforms the same class of devices in two-dimensional materials. The underlying mechanism responsible for the discovered behavior can be interpreted in terms of piezoelectric potential gating, allowing the device to perform like a phototransistor. The strain-induced gate voltage assists in the efficient separation of photogenerated charge carriers and enhances the mobility of In1-xSnxSe, resulting in good performance on a freeform surface. Thus, our multifunctional device is useful for the development of a variety of advanced applications and will help meet the demand of emerging technologies." @default.
• W2891240130 created "2018-09-27" @default.
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• W2891240130 date "2018-01-01" @default.
• W2891240130 modified "2023-09-25" @default.
• W2891240130 title "Ultra-high performance flexible piezopotential gated In_1−xSn_xSe phototransistor" @default.
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• W2891240130 doi "https://doi.org/10.1039/c8nr05234d" @default.
• W2891240130 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/30260359" @default.
• W2891240130 hasPublicationYear "2018" @default.
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