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- W2891571672 abstract "Indium selenide (InSe) has attracted tremendous research interest due to its high mobility and potential applications in next-generation electronics. However, the underlying transport mechanism of carriers in thin InSe at low temperatures remains unknown. Here we report the gate voltage and temperature-dependent magnetotransport properties of $ensuremath{gamma}$-InSe transistor devices with Hall mobility up to $2455phantom{rule{0.16em}{0ex}}mathrm{c}{mathrm{m}}^{2}phantom{rule{0.16em}{0ex}}{mathrm{V}}^{ensuremath{-}1}phantom{rule{0.16em}{0ex}}{mathrm{s}}^{ensuremath{-}1}$ at the temperature of 1.7 K. We observe a gate-tunable weak antilocalization behavior at lower magnetic field $B$, which shows a transition to weak localization at higher $B$ region. We find that the magnetotransport data agree well with the Hikami-Larkin-Nagaoka theory. The conductivity and temperature dependence of phase-coherence length reveal that the electron-electron ($etext{ensuremath{-}}e$) interactions are dominated dephasing mechanism for electronic transport in $ensuremath{gamma}$-InSe at low temperatures. The maximum phase-coherence length is found to be 320 nm at 1.7 K, larger than that of monolayer $mathrm{Mo}{mathrm{S}}_{2}$ and few-layer black phosphorus. These results enrich the fundamental understanding of electronic transport properties of InSe." @default.
- W2891571672 created "2018-09-27" @default.
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- W2891571672 date "2018-09-18" @default.
- W2891571672 modified "2023-10-18" @default.
- W2891571672 title "Gate-tunable weak antilocalization in a few-layer InSe" @default.
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- W2891571672 doi "https://doi.org/10.1103/physrevb.98.125414" @default.
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