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- W2891601813 abstract "We present a transfer-free process for the rapid growth of graphene on hexagonal boron nitride (h-BN) flakes via chemical vapor deposition. The growth of graphene on top of h-BN flakes is promoted by the adjacent copper catalyst. Full coverage of half-millimeter-sized h-BN crystals is demonstrated. The proximity of the copper catalyst ensures high-yield with a growth rate exceeding 2 μm min−1, which is orders of magnitude above what was previously reported on h-BN and approaches the growth rate on copper. Optical and electron microscopies along with Raman mapping indicates a two-step growth mechanism, leading to the h-BN being first covered by discontinuous graphitic species prior to the formation of a continuous graphene layer. Electron transport measurements confirm the presence of well-crystallized and continuous graphene, which exhibits a charge carrier mobility that reaches 2.0 × 104 cm2 V−1 s−1. Direct comparison of the mobility with graphene/h-BN devices obtained by wet transfer confirms an enhanced charge neutrality for the in situ grown structures." @default.
- W2891601813 created "2018-09-27" @default.
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- W2891601813 date "2018-09-18" @default.
- W2891601813 modified "2023-10-16" @default.
- W2891601813 title "Large scale graphene/h-BN heterostructures obtained by direct CVD growth of graphene using high-yield proximity-catalytic process" @default.
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- W2891601813 doi "https://doi.org/10.1088/2515-7639/aac66e" @default.
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