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- W2891804795 abstract "Image processing and other multimedia applications require large embedded storage. In some of the earlier works approximate memory has been shown as a potential energy-efficient solution for such error-tolerant applications. In this brief, we propose a single ended 6-T (SE6T) static random access memory (SRAM) cell which has about 50% less dynamic power compared to conventional 6-T SRAM cell with the same bit error rate (BER). Since image processing applications are tolerant to errors, ultra low voltage power-efficient embedded memories with BER can be used for storage. We show that 1 KB (256×32) SE6T memory consumes 0.45× dynamic power, 0.83× leakage power and takes 0.60× area as compared to conventional 6T SRAM memory for similar peak signal to noise ratio (PSNR). We have also proposed heterogeneous SE6T 1K SRAM memory and show that for a given power budget, PSNR enhances by at least by 14 dB compared to when homogeneous (identically sized bit-cells) SE6T SRAM memory are used. When compared with heterogeneous 6T SRAM memory, the heterogeneous SE6T SRAM memory consumes 0.44× dynamic power, 0.86× leakage power and takes 0.6× area for almost similar PSNR. For a given PSNR, the SE6T memory is cumulatively better in terms of design complexity, area and power when compared with other hybrid and heterogeneous approximate memories." @default.
- W2891804795 created "2018-09-27" @default.
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- W2891804795 date "2019-06-01" @default.
- W2891804795 modified "2023-10-05" @default.
- W2891804795 title "Energy Efficient Single-Ended 6-T SRAM for Multimedia Applications" @default.
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- W2891804795 doi "https://doi.org/10.1109/tcsii.2018.2869945" @default.
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