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• W2891818763 startingPage "1002A1" @default.
• W2891818763 abstract "Silicon-on-insulator (SOI) technology provides an optimal structure for realizing monolithic radiation imaging devices as it involves the preparation of a separate thick silicon layer for the sensing region in addition to a circuit layer. However, several difficult issues exist in the use of commercial SOI-CMOS processes to fabricate the imaging devices. We have developed an SOI pixel process based on an 0.2 µm fully-depleted (FD)-SOI CMOS process. To achieve a thick sensing region, we have bonded a high-resistivity floating-zone (FZ) wafer as the handle wafer. Since the device must be radiation-hardened, a new double SOI process technology is developed to improve the radiation hardness to more than 100 kGy(Si) and reduce the coupling between sensors and circuits. The SOI pixel process and sensors we developed are shown." @default.
• W2891818763 created "2018-09-27" @default.
• W2891818763 creator A5001280642 @default.
• W2891818763 date "2018-09-03" @default.
• W2891818763 modified "2023-09-23" @default.
• W2891818763 title "Silicon-on-insulator monolithic pixel technology for radiation image sensors" @default.
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• W2891818763 doi "https://doi.org/10.7567/jjap.57.1002a1" @default.
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