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- W2891862565 abstract "Surface potential of symmetric double gate MOSFET is analytically investigated by solving Poisson's equation subject to appropriate boundary conditions considering the presence of both free and doped carriers. Different semiconductors are considered for simulation purpose to find the change in potential w.r.t to the already existing results for Si, and carrier concentrations are modified within feasible limit to observe the variation. Simulations are also carried out at different temperatures in order to account the Joule heat effect at on-chip, and significant variations are observed. Result will play key role in determining drain current through DG MOSFET which satisfies Ortiz-Conde model." @default.
- W2891862565 created "2018-09-27" @default.
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- W2891862565 date "2018-05-01" @default.
- W2891862565 modified "2023-10-17" @default.
- W2891862565 title "Computing Surface Potential of Double Gate MOSFET for both Free and Doped Carrier Concentrations" @default.
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- W2891862565 doi "https://doi.org/10.1109/iementech.2018.8464756" @default.
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