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- W2891910184 abstract "Semimetallic-layered transition-metal dichalcogenides, such as TiS2, can serve as a platform material for exploring novel physics modulated by dimensionality, as well as for developing versatile applications in electronics and thermoelectrics. However, controlled synthesis of ultrathin TiS2 in a dry-chemistry way has yet to be realized because of the high oxophilicity of active Ti precursors. Here, we report the ambient pressure chemical vapor deposition (CVD) method to grow large-size, highly crystalline two-dimensional (2D) TiS2 nanosheets through in situ generating titanium chloride as the gaseous precursor. The addition of NH4Cl promoter can react with Ti powders and switch the solid-phase sulfurization reaction into a CVD process, thus enabling the controllability over the size, shape, and thickness of the TiS2 nanosheets via tuning the synthesis conditions. Interestingly, this semimetallic 2D material exhibits near-infrared surface plasmon resonance absorption and a memristor-like electrical behavior, both holding promise for further application developments. Our method hence opens a new avenue for the CVD growth of 2D metal dichalcogenides directly from metal powders and pave the way for exploring their intriguing properties and applications." @default.
- W2891910184 created "2018-09-27" @default.
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- W2891910184 date "2018-09-18" @default.
- W2891910184 modified "2023-10-17" @default.
- W2891910184 title "In Situ-Generated Volatile Precursor for CVD Growth of a Semimetallic 2D Dichalcogenide" @default.
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- W2891910184 doi "https://doi.org/10.1021/acsami.8b13428" @default.
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