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- W2891945494 abstract "In this study, a nickel oxide (NiO)-based resistive random-access memory (RRAM) was demonstrated with multistate data storage. The NiO thin film was fabricated by solution procession combined with UV irradiation at a low temperature of 200 °C. The device exhibited a high on/off resistance ratio (>105), as well as good endurance and excellent retention characteristics. It is important that multistate data storage was obtained by adjusting the RESET stop voltage, which resulted in a multilevel cell (MLC) to increase storage density. Unintentionally doped carbon (C) was distributed in the NiO thin film with periodic fluctuation. C-related filaments formation and multistate rupture were suggested as the resistive switching mechanism." @default.
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- W2891945494 date "2018-10-10" @default.
- W2891945494 modified "2023-09-26" @default.
- W2891945494 title "Multistate data storage in solution-processed NiO-based resistive switching memory" @default.
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- W2891945494 doi "https://doi.org/10.1088/1361-6641/aae06c" @default.
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