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• W2892056072 abstract "Precise measurements of the mobility anisotropy along high-symmetry crystal axes in black phosphorus (BP) MOSFETs are reported. Locally backgated BP MOSFETs with 13-nm HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> dielectric and channel length ranging from 0.3 to 0.7 μm are fabricated. A single BP flake of a uniform thickness is exfoliated and etched along armchair (AC) and zigzag (ZZ) crystal axes, and the orientations are confirmed using optical and transmission electron microscopy analyses. The hole and electron mobilities along each direction are extracted using the transfer length method. The AC-to-ZZ hole mobility ratio is found to increase from 1.4 (1.5) to 2.0 (2.9) as the sheet concentration increased from 5.1 x 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>11</sup> to 1.9 x 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>12</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-2</sup> at room temperature (77 K). The room-temperature electron mobility anisotropy is found to be similar to that for holes with an AC-to-ZZ mobility ratio increasing from 1.4 to 2.1 from 5.1 x 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>11</sup> to 1.9 x 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>12</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-2</sup> though electrons showed only a very weak temperature dependence. A Boltzmann transport model is used to explain the concentration- and temperature-dependent mobility anisotropies which can be well described using a charge center scattering model." @default.
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• W2892056072 date "2018-10-01" @default.
• W2892056072 modified "2023-10-18" @default.
• W2892056072 title "Mobility Anisotropy in Black Phosphorus MOSFETs With HfO₂ Gate Dielectrics" @default.
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• W2892056072 doi "https://doi.org/10.1109/ted.2018.2865440" @default.
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