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- W2892087067 abstract "Abstract V-doped semi-insulating (VDSI) SiC crystal is a promising substrate for high-frequency electronic devices achieved using GaN epitaxial films. However, V doping in a SiC crystal is difficult to control owing to the different sublimation temperatures of VC and SiC. The amount of V changes depending on the growth sequence, which has been a significant concern in VDSI SiC substrates in terms of wafer reliability. In this study, therefore, we aimed to synthesize a single source by vaporizing Si, C, and V under the same conditions to improve the doping issue in VDSI SiC. We synthesized V-doped SiC powder as the starting material for VDSI SiC substrate based on thermodynamic modeling, and the synthesized powder was used to grow a VDSI SiC crystal via physical vapor transport. Finally, considering the homogeneous V concentration in the grown crystal, the synthesized V-doped SiC was observed to be effective to grow VDSI SiC independent of the growth sequence." @default.
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- W2892087067 date "2018-12-01" @default.
- W2892087067 modified "2023-10-18" @default.
- W2892087067 title "Synthesis of V-doped SiC powder for growth of semi-insulating SiC crystals" @default.
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- W2892087067 doi "https://doi.org/10.1016/j.ceramint.2018.09.039" @default.
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