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• W2892170403 abstract "We demonstrated gate insulators (GI) fabricated by solution process with the aim of replacing traditional vacuum processed GI. We selected solution siloxane-based material due to its extremely high thermal resistance, excellent transparency, flexibility, and simple cost-effective fabrication. We made top gate TFT by depositing a siloxane gate insulator through spin-coating technique on a-IGZO. For comparison, we measured a conventional a-IGZO TFT using SiO2 as a GI for a reference. The TFTs with siloxane GI showed extremely high mobility (µ= 22±3 cm2·V-1·s-1), ultra-smooth interface (no hysteresis), and including other suitable electrical characteristics that are promising to enable the possibility to fabricate high performance all-solution processed devices in the future." @default.
• W2892170403 created "2018-09-27" @default.
• W2892170403 creator A5022411891 @default.
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• W2892170403 date "2018-09-01" @default.
• W2892170403 modified "2023-09-28" @default.
• W2892170403 title "High performance top gate a-IGZO TFT utilizing siloxane hybrid material as a gate insulator" @default.
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• W2892170403 doi "https://doi.org/10.1063/1.5027276" @default.
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