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• W2892596922 abstract "Cu 2 O has been deposited on quartz substrates by reactive ion beam sputter deposition. Experimental results show that by controlling argon/oxygen flow rates, both n-type and p-type Cu 2 O samples can be achieved. The bandgap of n-type and p-type Cu 2 O were found to be 2.3 and 2.5 eV, respectively. The variable temperature photoluminescence study shows that the n-type conductivity is due to the presence of oxygen vacancy defects. Both samples show stable photocurrent response that photocurrent change of both samples after 1,000 seconds of operation is less than 5%. Carrier densities were found to be 1.90 × 10 18 and 2.24 × 10 16 cm −3 for n-type and p-type Cu 2 O, respectively. Fermi energies have been calculated, and simplified band structures are constructed. Our results show that Cu 2 O is a plausible candidate for both photoanodic and photocathodic electrode materials in photoelectrochemical application." @default.
• W2892596922 created "2018-10-05" @default.
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• W2892596922 date "2018-09-24" @default.
• W2892596922 modified "2023-09-26" @default.
• W2892596922 title "Stable Cu₂O Photoelectrodes by Reactive Ion Beam Sputter Deposition" @default.
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• W2892596922 doi "https://doi.org/10.1155/2018/3792672" @default.
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